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Performance enhancement of InAsSb QW-MOSFETs with in-situ H₂ plasma cleaning for gate stack formation

Type:

Journal

Info:

2015 73rd Annual Device Research Conference (DRC)

Date:

2015-06-21

DOI:

http://dx.doi.org/10.1109/DRC.2015.7175668

Author Information

Name	Institution
Michael Barth	The Pennsylvania State University
G. Bruce Rayner, Jr.	Kurt J. Lesker Company
S. Mack	U.S. Naval Research Laboratory
Brian R. Bennett	U.S. Naval Research Laboratory
Suman Datta	The Pennsylvania State University

Films

Other HfO₂

Hardware used: Kurt J Lesker ALD-150L

CAS#: 1333-74-0

TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me₂N)₄Hf, also CAS# 19782-68-4

CAS#: 19962-11-9

CAS#: 7732-18-5

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics

Analysis: -

Diagnostic: -

Characteristic: Capacitance

Analysis: C-V, Capacitance-Voltage Measurements

Diagnostic: -

Substrates

GaSb

Notes

512