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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Kurt J Lesker ALD-150L Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Kurt J Lesker ALD-150L hardware returned 15 records.

NumberTitle
1Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
2Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
3Structural and optical characterization of low-temperature ALD crystalline AlN
4Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
5XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
6Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
7AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
8Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
9ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
10Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
11Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
12Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
13Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
14In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
15Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation