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Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN

Type:
Conference Proceedings
Info:
IEEE J. Electron Dev. Soc., Vol. 59, No. 10, May 2014, pp. 2662
Date:
2014-05-19
DOI:
http://gaasmantech.com/Digests/2014/papers/049.pdf

Author Information

Name Institution
Kevin VoonUniversity of Alberta
Kyle BotheUniversity of Alberta
Pouyan MotamediUniversity of Alberta
Douglas W. BarlageUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaN

Notes

363