About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 139 record(s).

NumberTitle
1Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
2Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
3Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
4Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
5XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
6Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
7Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
8Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
9650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
10Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
11Atomic layer epitaxy for quantum well nitride-based devices
12Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
13The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
14PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
17Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
18Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
19AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
20Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
21Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
22Crystalline growth of AlN thin films by atomic layer deposition
23Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
24Plasma Enhanced Atomic Layer Deposition on Powders
25Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
26Perspectives on future directions in III-N semiconductor research
27Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
28Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
29High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
30High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
31Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
32Experimental and theoretical determination of the role of ions in atomic layer annealing
33Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
34High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
35Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
36Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
37Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
38The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
39AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
40ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
41Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
42Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
43Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
44Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
45Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
46Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
47AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
48Radical Enhanced Atomic Layer Deposition of Metals and Oxides
49Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
50Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
51Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
52Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
53Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
54Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
55Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
56Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
57Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
58Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
59Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
60Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
61Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
64Silicon surface passivation with atomic layer deposited aluminum nitride
65Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
66Properties of AlN grown by plasma enhanced atomic layer deposition
67Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
68Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
69AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
70A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
71Nitride memristors
72Sub-nanometer heating depth of atomic layer annealing
73Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
74Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
75High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
76Structural and optical characterization of low-temperature ALD crystalline AlN
77AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
78Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
79A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
80TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
81Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
82Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
83Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
84Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
85Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
86Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
87Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
88Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
89Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
90A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
91Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
92Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
93Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
94Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
95Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
96Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
97Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
98Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
99Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
100Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
101Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
102Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
103Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
104Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
105Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
106Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
107Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
108Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
109New materials for memristive switching
110Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
111Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
112Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
113GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
114Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
115GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
116Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
117Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
118Formation of aluminum nitride thin films as gate dielectrics on Si(100)
119A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
120Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
121Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
122PEALD AlN: controlling growth and film crystallinity
123823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
124Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
125Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition