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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation

Type:
Journal
Info:
2015 J. Semicond. 36 074008
Date:
2015-02-05

Author Information

Name Institution
Tan XinHebei Semiconductor Research Institute
Lü YuanjieHebei Semiconductor Research Institute
Gu GuodongHebei Semiconductor Research Institute
Wang LiChina National Defense Sciences Technology Information Center
Dun ShaoboHebei Semiconductor Research Institute
Song XuboHebei Semiconductor Research Institute
Guo HongyuHebei Semiconductor Research Institute
Yin JiayunHebei Semiconductor Research Institute
Cai ShujunHebei Semiconductor Research Institute
Feng ZhihongHebei Semiconductor Research Institute

Films

Plasma AlN

Hardware used: Unknown


Film/Plasma Properties

Substrates

Notes

455