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Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

Type:

Journal

Info:

Journal of Applied Physics 107, 114505 (2010)

Date:

2010-04-21

DOI:

http://dx.doi.org/10.1063/1.3431349

Author Information

Name	Institution
P. S. Waggoner	Cornell University
C. P. Tan	Cornell University
H. G. Craighead	Cornell University

Films

Plasma SiO₂

Hardware used: Oxford Instruments FlexAL

BTBAS, bis(tert-butylamido) silane, (t-BuCNH)₂SiH₂

CAS#: 186598-40-3

CAS#: 7782-44-7

Deposition Temperature = 110C

Plasma AlN

Hardware used: Oxford Instruments FlexAL

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness

Analysis: Ellipsometry

Diagnostic: J.A. Woollam

Characteristic: Morphology, Roughness, Topography

Analysis: AFM, Atomic Force Microscopy

Diagnostic: -

Substrates

Si₃N₄

Notes

1469