Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s).

NumberTitle
1Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
2Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
3Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
4Residual stress study of thin films deposited by atomic layer deposition
5Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
6Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
7Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
8Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
9Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
10Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
11Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
12Designing high performance precursors for atomic layer deposition of silicon oxide
13Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
14Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
15Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
16Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
17Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator