Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s).

NumberTitle
1Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
2Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
3Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
4Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
5Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
6Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
7Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
8Designing high performance precursors for atomic layer deposition of silicon oxide
9Residual stress study of thin films deposited by atomic layer deposition
10Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
11Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
12Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
13Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
14Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
15Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
16Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
17Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma