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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s).

NumberTitle
1Residual stress study of thin films deposited by atomic layer deposition
2Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
3Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
4Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
5Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
6Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
7Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
8Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
9Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
10Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
11Designing high performance precursors for atomic layer deposition of silicon oxide
12Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
13Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
14Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
15Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
16Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
17Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition