Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s).

NumberTitle
1Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
2Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
3Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
4Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
5Residual stress study of thin films deposited by atomic layer deposition
6Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
7Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
8Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
9Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
10Designing high performance precursors for atomic layer deposition of silicon oxide
11Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
12Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
13Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
14Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
15Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
16Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
17Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition