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Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma

Type:
Presentation
Info:
ALD 2009
Date:
2009-07-20
DOI:
No DOI

Author Information

Name Institution
Sung-Sil ChoAir Products
Moo-Sung KimAir Products
Sang-Hyun YangAir Products
Xinjian LeiAir Products

Films

Plasma SiO2

Hardware used: Quros 100
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal SiO2

Hardware used: Quros 100
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Unknown

Notes

Presentation contains physical characteristics data. Probably same dataset as is in Air Products datasheet.
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