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Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Type:
Journal
Info:
ACS Appl. Mater. Interfaces 7, 35, 19857-19862
Date:
2015-08-25
DOI:
http://dx.doi.org/10.1021/acsami.5b06833

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
Eline M. J. BraekenEindhoven University of Technology
Stephen E. PottsQueen Mary University of London
Suvi HaukkaASM Microchemistry Oy
Viljami PoreASM Microchemistry Oy
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 25-500C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 25-500C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 25-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Silicon

Notes

Hydrogen containing plasmas had very slow growth rates and were not fully investigated.
FlexAL PEALD SiNx study with BTBAS and N2, N2/H2, and NH3 plasmas.
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