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Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD

Type:
Poster
Info:
ALD 2008 Poster
Date:
2008-07-02
DOI:
No DOI

Author Information

Name Institution
Qi FangOxford Instruments
Chris HodsonOxford Instruments

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: -

Substrates

Notes

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