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Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Acta Materialia 61 (2013) 7660 - 7670
Date:
2013-09-05
DOI:
http://dx.doi.org/10.1016/j.actamat.2013.09.003

Author Information

Name Institution
Takane UsuiStanford University
Christine A. DonnellyStanford University
Manca LogarStanford University
Robert SinclairStanford University
Joop SchoonmanStanford University
Fritz B. PrinzStanford University

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

Nice breakdown theory section,
592