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Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2015, 7 (40), pp 22525-22532
Date:
2015-09-22
DOI:
http://dx.doi.org/10.1021/acsami.5b06801

Author Information

Name Institution
Anne-Marije AndringaEindhoven University of Technology
Alberto PerrottaEindhoven University of Technology
Koen de PeuterEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Characteristic: Porosity
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Calcium Test
Diagnostic: -

Substrates

Si with native oxide

Notes

383