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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Type:
Journal
Info:
Nanoscale Research Letters (2019) 14:55
Date:
2019-02-01
DOI:
http://dx.doi.org/10.1186/s11671-019-2889-y

Author Information

Name Institution
Zhen ZhuAalto University
Perttu SippolaAalto University
Oili M. E. YlivaaraVTT Technical Research Centre
Chiara ModaneseAalto University
Marisa Di SabatinoNorwegian University of Science and Technology (NTNU)
Kenichiro MizohataUniversity of Helsinki
Saoussen MerdesBeneq Oy
Harri LipsanenAalto University
Hele SavinAalto University

Films

Plasma SiO2

Hardware used: Beneq TFS-200
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
CO2, Carbon Dioxide
CAS#: 124-38-9
Deposition Temperature = 90C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE400adv

Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy
Diagnostic: Horiba GD-Profiler 2

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ATR-FTIR
Diagnostic: Thermo Electron Nicolet 380

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Refractive Index
Analysis: Optical Transmission
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Extinction Coefficient
Analysis: Optical Transmission
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: Flexus 2320 Thin Film Stress Measurement System

Substrates

Si(100)
Sapphire

Notes

1252