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Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Type:
Journal
Info:
Thin Solid Films 558 (2014) 93 - 98
Date:
2014-02-26
DOI:
https://doi.org/10.1016/j.tsf.2014.02.087

Author Information

Name Institution
Matti PutkonenVTT Technical Research Centre
Markus BosundBeneq Oy
Oili M. E. YlivaaraVTT Technical Research Centre
Riikka L. PuurunenVTT Technical Research Centre
Lauri KilpiVTT Technical Research Centre
Helena RonkainenVTT Technical Research Centre
Sakari SintonenAalto University
Saima AliAalto University
Harri LipsanenAalto University
Xuwen LiuAalto University
Eero HaimiAalto University
Simo-Pekka HannulaAalto University
Timo SajavaaraUniversity of Jyväskylä
Iain BuchananAir Products
Eugene KarwackiAir Products
Mika Vähä-NissiVTT Technical Research Centre

Films

Thermal SiO2

Hardware used: Beneq TFS-200
AP-LTO 330
CAS#: 0-0-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 250-350C

Thermal SiO2

Hardware used: Beneq P800
AP-LTO 330
CAS#: 0-0-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 150-350C

Plasma SiO2

Hardware used: Beneq TFS-200
AP-LTO 330
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 30-200C

Thermal SiO2

Hardware used: Beneq P800
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 250-350C

Plasma SiO2

Hardware used: Beneq TFS-200
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE400adv

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: SENTECH SE400adv

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Characteristic: Adhesion
Analysis: Scratch Testing
Diagnostic: CSM Micro Combi

Characteristic: Hardness
Analysis: Nanoindentation
Diagnostic: Hysitron TI-900 TriboIndenter

Characteristic: Elastic Modulus
Analysis: Nanoindentation
Diagnostic: Hysitron TI-900 TriboIndenter

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(100)
Corning D263T
BSG, BoroSilicate Glass

Notes

1492