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Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Type:
Journal
Info:
Applied Physics Letters 107, 014102 (2015)
Date:
2015-06-25
DOI:
http://dx.doi.org/10.1063/1.4926366

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
Koen de PeuterEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-400C

Film/Plasma Properties

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: OES
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

FlexAL PEALD SiNx plasma gas residence time study.
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