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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 71, No. 4, pp. 185--190
Date:
2017-08-20
DOI:
http://dx.doi.org/10.3938/jkps.71.185

Author Information

Name Institution
Seung-Hyun RohSeoul National University
Su-Keun EomSeoul National University
Gwang-Ho ChoiSeoul National University
Myoung-Jin KangSeoul National University
Dong-Hwan KimSeoul National University
Il-Hwan HwangSeoul National University
Kwang-Seok SeoSeoul National University
Jae-Gil LeeSeoul National University
Young-Chul ByunUniversity of Texas at Dallas
Ho-Young ChaHongik University

Films

Thermal SiO2

Hardware used: Unknown
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 300-450C

Other SiON

Hardware used: Unknown
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O3, Ozone
CAS#: 10028-15-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 300-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Conduction Band Offset
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Si(100)

Notes

1103