Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Designing high performance precursors for atomic layer deposition of silicon oxide

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-11-21
DOI:
http://dx.doi.org/10.1116/1.4903275

Author Information

Name Institution
Anupama MallikarjunanAir Products

Films

Thermal SiO2

Hardware used: Custom
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Thermal SiO2

Hardware used: Custom
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Thermal SiO2

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma SiO2

Hardware used: ASM Eagle XP8
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

226