Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2, CAS# 27804-64-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 45 record(s).

NumberTitle
1Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
2Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
3High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
4Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
5Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
6Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
7Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
8Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
9Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
10Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle
11Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
12Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
13Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
14Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
15Energy-enhanced atomic layer deposition for more process and precursor versatility
16Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
17Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
18Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration
19Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
20On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
21A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
22Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
23Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
24Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions
25Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy
26Breakdown and Protection of ALD Moisture Barrier Thin Films
27Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals
28Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
29Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
30Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
31PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
32Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
33Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
34Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
35Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
36Designing high performance precursors for atomic layer deposition of silicon oxide
37Comparative study of ALD SiO2 thin films for optical applications
38Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
39Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
40'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
41Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
42Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
43Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
44Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
45Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2