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Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2

Type:
Journal
Info:
J. Phys. Chem. C, 2021, 125 (15), pp 8244-8252
Date:
2021-03-27
DOI:
http://dx.doi.org/10.1021/acs.jpcc.1c01505

Author Information

Name Institution
Karsten ArtsEindhoven University of Technology
Sanne DeijkersEindhoven University of Technology
Riikka L. PuurunenAalto University
Erwin (W.M.M.) KesselsEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-310C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-310C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: Filmetrics F40-UV

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Micropillar Arrays

Notes

1717