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Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2

Type:
Journal
Info:
Chem. Mater. 0, 0, null
Date:
2021-04-15
DOI:
http://dx.doi.org/10.1021/acs.chemmater.1c00781

Author Information

Name Institution
Karsten ArtsEindhoven University of Technology
Harvey ThepassEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Riikka L. PuurunenAalto University
Erwin (W.M.M.) KesselsEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology

Films

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: Filmetrics

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 7500F

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Substrates

Silicon

Notes

1570