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Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Type:
Journal
Info:
J. Phys. Chem. C, 2021, 125 (45), pp 24945-24957
Date:
2021-10-26
DOI:
http://dx.doi.org/10.1021/acs.jpcc.1c07980

Author Information

Name Institution
M. A. MioneEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Alfredo MameliTNO
Erwin (W.M.M.) KesselsEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology

Films

Plasma SiO2

Hardware used: Custom Spatial
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Avantes AvaSpec-2048L

Characteristic: Density
Analysis: Custom
Diagnostic: Custom

Substrates

Silicon

Notes

1633