Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition

Type:
Conference Proceedings
Info:
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
Date:
2016-01-25
DOI:
http://dx.doi.org/10.1109/ULIS.2016.7440045

Author Information

Name Institution
Golnaz KarbasianUniversity of Notre Dame
Alexei P. OrlovUniversity of Notre Dame
A. S. MukasyanUniversity of Notre Dame
Gregory L. SniderUniversity of Notre Dame

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

SiO2
Ni

Notes

816