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Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition

Type:

Conference Proceedings

Info:

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Date:

2016-01-25

DOI:

http://dx.doi.org/10.1109/ULIS.2016.7440045

Author Information

Name	Institution
Golnaz Karbasian	University of Notre Dame
Alexei P. Orlov	University of Notre Dame
A. S. Mukasyan	University of Notre Dame
Gregory L. Snider	University of Notre Dame