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Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A122 (2016)
Date:
2015-11-05

Author Information

Name Institution
Golnaz KarbasianUniversity of Notre Dame
Michael S. McConnellUniversity of Notre Dame
Alexei P. OrlovUniversity of Notre Dame
Sergei RouvimovUniversity of Notre Dame
Gregory L. SniderUniversity of Notre Dame

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Ni

Notes

412