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Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma

Type:
Journal
Info:
ECS Solid State Letters, 2 (12) P114-P116 (2013)
Date:
2013-09-24
DOI:
http://dx.doi.org/10.1149/2.007312ssl

Author Information

Name Institution
Jong-Sik ChoiSeoul National University
Bong Seob YangSeoul National University
Seok-Jun WonSamsung Electronics Co.
Jun-Rae KimSeoul National University
Sungin SuhSeoul National University
Hui Kyung ParkChonnam National University
Jaeyeong HeoChonnam National University
Hyeong Joon KimSeoul National University

Films

Plasma SiO2

Hardware used: ASM Genitech PEALD
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
NH3, Ammonia
CAS#: 7664-41-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma SiO2

Hardware used: ASM Genitech PEALD
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner L116D

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145A Semiconductor Parameter Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145A Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

598