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Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 06A104 (2018)
Date:
2018-09-07
DOI:
http://dx.doi.org/10.1116/1.5043309

Author Information

Name Institution
Shinya IwashitaTokyo Electron Technology Solutions, Ltd.
Tsuyoshi MoriyaTokyo Electron Technology Solutions, Ltd.
Akira UedonoUniversity of Tsukuba

Films

Plasma TiSiO

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Microstructure
Analysis: PAS, Positron Annihilation Spectroscopy
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Substrates

Si(100)

Notes

1543