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High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, PP. 857-859, 2010
Date:
2010-05-02
DOI:
http://dx.doi.org/10.1109/LED.2010.2049978

Author Information

Name Institution
Seok-Jun WonSeoul National University
Sungin SuhSeoul National University
Myung Soo HuhSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Etch Rate
Analysis: Custom
Diagnostic: Custom

Characteristic: Density
Analysis: GIXRR, Grazing Incidence X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

Claims BDEAS has no reaction with O2 gas but I doubt this.
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