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Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 5, PP. 496-498, 2015
Date:
2015-03-16
DOI:
http://dx.doi.org/10.1109/LED.2015.2412685

Author Information

Name Institution
Dustin Zachary AustinOregon State University
Derryl AllmanOregon State University
David PriceOregon State University
Sallie HoseOregon State University
John F. Conley, Jr.Oregon State University

Films

Plasma Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma SiO2

Hardware used: Picosun R200
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

TaN
Al2O3

Notes

514