About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition

Type:
Journal
Info:
Chem. Mater. 2016, 28, 1247-1255
Date:
2016-02-16
DOI:
http://dx.doi.org/10.1021/acs.chemmater.5b04422

Author Information

Name Institution
Guo-Yong FangWenzhou University
Lina XuWenzhou University
Jing MaNanjing University
Aidong LiNanjing University

Films

Plasma SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: DFT, Density Functional Theory
Diagnostic: -

Substrates

Notes

PEALD discussion limited to recap of reference 22 which is here.
768