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PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2018, 10 (8), pp 7422-7434
Date:
2018-01-17

Author Information

Name Institution
Maximilian GebhardRuhr-University Bochum
Lukas MaiRuhr-University Bochum
Lars BankoRuhr-University Bochum
Felix MitschkerRuhr-University Bochum
Christian HoppeUniversity of Paderborn
Montgomery JaritzRWTH Aachen University
Dennis KirchheimRWTH Aachen University
Christoph ZekornRWTH Aachen University
Teresa de los ArcosUniversity of Paderborn
Dario GrochlaRuhr-University Bochum
Rainer DahlmannRWTH Aachen University
G. GrundmeierUniversity of Paderborn
Peter AwakowiczRuhr-University Bochum
Alfred LudwigRuhr-University Bochum
Anjana DeviRuhr-University Bochum

Films

Plasma SiO2

Hardware used: Custom


CAS#: 7782-44-7

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Stress
Analysis: -

Characteristic: Damage, Defects
Analysis: -

Characteristic: Oxygen Transmission Rate (OTR)
Analysis: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Substrates

Si(100)
Polypropylene

Notes

1107