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Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications

Type:
Journal
Info:
Applied Optics, Vol. 56, No. 4, 2017
Date:
2016-10-12
DOI:
http://dx.doi.org/10.1364/AO.56.000C47

Author Information

Name Institution
Svetlana ShestaevaFraunhofer Institute for Applied Optics and Precision Engineering
Astrid BingelFraunhofer Institute for Applied Optics and Precision Engineering
Peter MunzertFraunhofer Institute for Applied Optics and Precision Engineering
Lilit GhazaryanFriedrich-Schiller-Universität Jena
Christian PatzigFraunhofer Institute for Microstructure of Materials and Systems IMWS
Andreas TünnermannFraunhofer Institute for Applied Optics and Precision Engineering
Adriana SzeghalmiFraunhofer Institute for Applied Optics and Precision Engineering

Films

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 120C

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-300C

Plasma SiO2

Hardware used: Oxford Instruments OpAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Plasma SiO2

Hardware used: Oxford Instruments OpAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal SiO2

Hardware used: Oxford Instruments OpAL
AP-LTO 330
CAS#: 0-0-0
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 200C

Plasma HfO2

Hardware used: Oxford Instruments OpAL
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Stress
Analysis: Stress Measurement
Diagnostic: Flexus 2320 Thin Film Stress Measurement System

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Varian 3100 FTIR

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan 3

Substrates

Si(100)
SiO2
Lithosil Q1
Glass
Glass, BK7

Notes

878