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Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx

Type:
Journal
Info:
Plasma Process Polym. 2019;e1900032
Date:
2019-03-29
DOI:
http://dx.doi.org/10.1002/ppap.201900032

Author Information

Name Institution
Noémi LeickColorado School of Mines
Jochem M.M. HuijsEindhoven University of Technology
Rafaiel A. OvanesyanColorado School of Mines
Dennis M. HausmannLam Research Corporation
Sumit AgarwalColorado School of Mines

Films

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3
CAS#: 0-0-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 225-375C

Plasma SiNx

Hardware used: Custom Remote Inductively Coupled Plasma
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 225-375C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: ATR-FTIR
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: HFS, Hydrogen Forward Scattering
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

1355