di(sec-butylamino)silane (DSBAS), ((s-Bu)₂N)SiH₃, CAS# 0-0-0

Your search for publications using this chemistry returned 6 record(s).

Number	Title
1	Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N₂ Plasma on Planar and 3D Substrate Topographies
2	Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
3	Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
4	Surface reactions of aminosilane precursors during N₂ plasma-assisted atomic layer deposition of SiN_x
5	Designing high performance precursors for atomic layer deposition of silicon oxide
6	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

di(sec-butylamino)silane (DSBAS), ((s-Bu)2N)SiH3, CAS# 0-0-0