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Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process

Type:
Journal
Info:
J. Mater. Chem. C, 2014,2, 5805-5811
Date:
2014-05-12
DOI:
http://dx.doi.org/10.1039/C4TC00648H

Author Information

Name Institution
Woo-Hee KimYonsei University

Films

Thermal B2O3

Hardware used: Unknown
B(OMe)3, Trimethyl borate, Boric acid trimethyl ester, Methyl borate
CAS#: 121-43-7
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Plasma B2O3

Hardware used: Unknown
B(OMe)3, Trimethyl borate, Boric acid trimethyl ester, Methyl borate
CAS#: 121-43-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal B:SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
B(OMe)3, Trimethyl borate, Boric acid trimethyl ester, Methyl borate
CAS#: 121-43-7
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range N/A

Plasma B:SiO2

Hardware used: Unknown
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
B(OMe)3, Trimethyl borate, Boric acid trimethyl ester, Methyl borate
CAS#: 121-43-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Extinction Coefficient
Analysis: -
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Notes

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