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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

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Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Type:
Journal
Info:
J. Phys. Chem. Lett. 2015, 6, 3610-3614
Date:
2015-08-30

Author Information

Name Institution
Chaitanya Krishna AndeEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Koen de PeuterEindhoven University of Technology
Maarten van DrunenEindhoven University of Technology
Simon D. ElliottTyndall National Institute, University College Cork
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx


Plasma SiNx


Plasma SiNx


Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Silicon

Notes

523