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Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

Type:

Journal

Info:

ECS Transactions, 61 (4) 211-214 (2014)

Date:

2014-05-13

DOI:

http://dx.doi.org/10.1149/06104.0211ecst

Author Information

Name	Institution
Shih-Chien Liu	National Chiao Tung University
Yuen-Yee Wong	National Chiao Tung University
Yueh Chin Lin	National Chiao Tung University
Edward Yi Chang	National Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics

Analysis: Transistor Characterization

Diagnostic: -

Substrates

Si₃N₄

Notes

1387