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Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013
Date:
2013-07-10
DOI:
http://dx.doi.org/10.1109/LED.2013.2271973

Author Information

Name Institution
Cheng LiuHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Sen HuangHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

GaN

Notes

588