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TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Materials Science Forum, Vol. 817, pp. 466-471, 2015
Date:
2015-04-10
DOI:
http://dx.doi.org/10.4028/www.scientific.net/MSF.817.466

Author Information

Name Institution
Yi JiaZhejiang University
Rou Gang TangJiaxing Microelectronic Equipment
Wei Er LuInstitute of Microelectronics of Chinese Academy of Sciences
You Tong FangZhejiang University
Yang XiaJiaxing Microelectronic Equipment

Films

Plasma TiN

Hardware used: PEALD-200A, Jiaxing Kemicro Microelectronic
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma AlN

Hardware used: PEALD-200A, Jiaxing Kemicro Microelectronic
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Hardness
Analysis: Nanoindentation
Diagnostic: -

Substrates

Si(001)

Notes

548