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Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:62, Issue:11, Page(s): 3627-3632, 2015
Date:
2015-09-28
DOI:
http://dx.doi.org/10.1109/TED.2015.2476597

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Effective Charge Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

459