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Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

Type:
Journal
Info:
Applied Physics Letters 111, 141606 (2017)
Date:
2017-09-13
DOI:
http://dx.doi.org/10.1063/1.4994974

Author Information

Name Institution
Mikael BroasAalto University
Hua JiangAalto University
Andreas GraffFraunhofer Institute for Microstructure of Materials and Systems IMWS
Timo SajavaaraUniversity of Jyväskylä
Vesa VuorinenAalto University
Mervi Paulasto-KröckelAalto University

Films

Thermal Al2O3

Hardware used: Beneq P400A
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 450C

Plasma AlN

Hardware used: Picosun R200
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

Si(100)

Notes

1071