Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

AlCl3, Aluminum Trichloride, CAS# 7446-70-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s).

NumberTitle
1Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
2Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
3Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
4Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
5Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
6Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
7Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
8Radical Enhanced Atomic Layer Deposition of Metals and Oxides
9Formation of aluminum nitride thin films as gate dielectrics on Si(100)