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Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 21(5), Sep/Oct 2003
Date:
2003-08-14
DOI:
http://dx.doi.org/10.1116/1.1590963

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma TiAlN

Hardware used: Custom
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Custom
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma AlN

Hardware used: Custom
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Notes

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