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Sang-Won Kang Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sang-Won Kang returned 27 record(s).

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
3Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
4Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
5Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
6Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
7Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
8Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
9Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
10Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
11Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
12TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
13Study on the characteristics of aluminum thin films prepared by atomic layer deposition
14Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
15Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
16Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
17Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
18A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
19Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
20Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
21Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
22Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
23Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
24Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
25Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
26Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
27Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon