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Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (4) C46-C48 (2004)
Date:
2003-09-23
DOI:
http://dx.doi.org/10.1149/1.1648612

Author Information

Name Institution
Oh-Kyum KwonKorea Advanced Institute of Science and Technology
Se-Hun KwonKorea Advanced Institute of Science and Technology
Hyoung-Sang ParkKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ru

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TiN

Notes

1238