About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2, CAS# 32992-96-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 42 record(s).

NumberTitle
1Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
2Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
3ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
4Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
5Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
6PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
7Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
8Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
9Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
10Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
11In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
12Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
13Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
14Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
15The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
16Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
17Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
18Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
19Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
20Texture of atomic layer deposited ruthenium
21Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
22Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2
23Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
24(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
25Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
26A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
27Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
28Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2
29Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
30In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
31Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
32Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
33Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
34Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
35Ru thin film grown on TaN by plasma enhanced atomic layer deposition
36Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
37Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
38Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
39Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
40Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
41Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
42Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals