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Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (5) H296-H300 (2008)
Date:
2008-01-03
DOI:
http://dx.doi.org/10.1149/1.2868779

Author Information

Name Institution
Se-Hun KwonKorea Advanced Institute of Science and Technology
Oh-Kyum KwonKorea Advanced Institute of Science and Technology
Jin-Hyock KimHynix Semiconductor
Heung-Ryong OhKorea Advanced Institute of Science and Technology
Kwang-Ho KimPusan National University
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ru

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Nucleation
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TiN

Notes

1342