Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (5) H296-H300 (2008)
Date:
2008-01-03
DOI:
http://dx.doi.org/10.1149/1.2868779

Author Information

Name Institution
Se-Hun KwonKorea Advanced Institute of Science and Technology
Oh-Kyum KwonKorea Advanced Institute of Science and Technology
Jin-Hyock KimHynix Semiconductor
Heung-Ryong OhKorea Advanced Institute of Science and Technology
Kwang-Ho KimPusan National University
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ru

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Nucleation
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TiN

Notes

1342