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Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 517 (2009) 4689 - 4693
Date:
2009-03-02
DOI:
http://dx.doi.org/10.1016/j.tsf.2009.03.001

Author Information

Name Institution
Qi XieFudan University
Yu-Long JiangFudan University
Jan MusschootGhent University
Davy DeduytscheGhent University
Christophe DetavernierGhent University
Ronald L. Van MeirhaegheGhent University
Sven Van den BergheBelgian Nuclear Research Centre SCK-CEN
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-270C

Plasma TaNx

Hardware used: Custom
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Thermal Stability
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Substrates

Si(100)
TaN

Notes

756