Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum, CAS# 19824-59-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 25 record(s).

NumberTitle
1TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
2Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
3Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
4Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
5Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
6Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
7Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
8Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
9Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
10Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
11Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
12Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
13Ru thin film grown on TaN by plasma enhanced atomic layer deposition
14Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
15Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
16Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
17Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
18Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
19In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
20Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
21Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
22Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
23Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
24Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
25Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants