Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 98, 014308 (2005)
Date:
2005-04-27
DOI:
http://dx.doi.org/10.1063/1.1935761

Author Information

Name Institution
Hyungjun KimPohang University of Science and Technology (POSTECH)
Christophe DetavernierIBM
O. van der StratenIBM
S. M. RossnagelIBM
A. J. KellockIBM
D.-G. ParkIBM

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-325C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 4000EX

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1260