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TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 88 (2011) 646 - 650
Date:
2010-06-15
DOI:
https://doi.org/10.1016/j.mee.2010.06.037

Author Information

Name Institution
Qi XieGhent University
Davy DeduytscheGhent University
Jan MusschootGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University
Shao-Feng DingFudan University
Xin-Ping QuFudan University

Films

Plasma TaCN

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Silicon
SiO2

Notes

1449