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Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 23, 979-983 (2005)
Date:
2005-04-11
DOI:
http://dx.doi.org/10.1116/1.1926289

Author Information

Name Institution
Akira FuruyaSemiconductor Leading Edge Technologies Inc.
Hiroshi TsudaSemiconductor Leading Edge Technologies Inc.
Shinichi OgawaSemiconductor Leading Edge Technologies Inc.

Films

Plasma TaNx

Hardware used: Custom
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
He, Helium
CAS#: 7440-59-7
Deposition Temperature = 275C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Adhesion
Analysis: Bending Test, Four Point Bend Delamination Test
Diagnostic: -

Characteristic: Electrical Properties
Analysis: -
Diagnostic: -

Substrates

SiO2

Notes

Films were 60%+ oxygen.
Precursor exposure and plasma exposure done in two different reactors without vacuum break.
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